STGWT60H65DFB دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STGWT60H65DFB
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حجم فایل
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52.25
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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21
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مشخصات فنی
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RoHS:
true
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Type:
Trench Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
STMicroelectronics STGWT60H65DFB
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
80A
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Power Dissipation (Pd):
375W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
1.09mJ
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Pulsed Collector Current (Icm):
240A
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Turn?off Switching Loss (Eoff):
0.626mJ
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Diode Reverse Recovery Time (Trr):
60ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
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Package:
TO-3P-3
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Manufacturer:
STMicroelectronics
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
80A
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Current - Collector Pulsed (Icm):
240A
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Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 60A
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Power - Max:
375W
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Switching Energy:
1.09mJ (on), 626µJ (off)
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Input Type:
Standard
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Gate Charge:
306nC
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Td (on/off) @ 25°C:
51ns/160ns
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Test Condition:
400V, 60A, 5Ohm, 15V
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Reverse Recovery Time (trr):
60ns
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Mounting Type:
Through Hole
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Package / Case:
TO-3P-3, SC-65-3
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Supplier Device Package:
TO-3P
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Base Part Number:
STGWT60
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detail:
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-3P
